silicide MOSFET

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MOSFET — Two power MOSFETs in the surface mount package D2PAK. Operating as switches, each of these components can sustain a blocking voltage of 120 volts in the OFF state, and can conduct a continuous current of 30 amperes in the ON state, dissipating up … Wikipedia
High-k+Metal-Gate-Technik — Schematischer Querschnitt durch den Gate Aufbau eines Transistors in High k+Metal Gate Technik Die High k+Metal Gate Technik (HKMG Technik) bezeichnet in der Halbleitertechnik einen speziellen Aufbau von Metall Isolator Halbleiter… … Deutsch Wikipedia
Polycrystalline silicon — Polycrystalline silicon, also called polysilicon, is a material consisting of small silicon crystals. It differs from single crystal silicon, used for electronics and solar cells, and from amorphous silicon, used for thin film devices and solar… … Wikipedia
Ruthenium — (pronEng|ruːˈθiːniəm) is a chemical element that has the symbol Ru and atomic number 44. A rare transition metal of the platinum group of the periodic table, ruthenium is found associated with platinum ores and used as a catalyst in some platinum … Wikipedia
Gate oxide — The gate oxide is the third region of the MOSFET between the source and drain. It is a thin layer of pure, defect free, 5 200 nm thick thermally grown oxide. It serves as the dielectric layer so that the gate can sustain as high as 1 to 5 MV/cm… … Wikipedia

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